MPSA56 / mmbta56 / pzta56 pnp general purpose amplifier mmbta56 MPSA56 pzta56 this device is designed for general purpose amplifier applications at collector currents to 300 ma. sourced from process 73. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ces collector-emitter voltage 80 v v cbo collector-bas e voltage 80 v v ebo emitter-base voltage 4.0 v i c collector current - continuous 500 ma t j , t stg operating and storage j unction temperature range -55 to +150 c thermal characteristics ta = 25c unless otherwise noted c b e to-92 c b e sot-23 mark: 2g b c c sot-223 e * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 . symbol characteristic max units MPSA56 *mmbta56 **pzta56 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r q jc thermal resistance, junction to case 83.3 c/w r q ja thermal resistance, junction to ambient 200 357 125 c/w discrete power & signal technologies ? 1997 fairchild semiconductor corporation
MPSA56 / mmbta56 / pzta56 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collec tor-emitter breakdown voltage* i c = 1.0 ma, i b = 0 80 v v (br)cbo collec tor-base breakdown voltage i c = 100 m a, i e = 0 80 v v (br) ebo emitter-base breakdown voltage i e = 100 m a, i c = 0 4.0 v i ceo collec tor-cutoff current v ce = 60 v, i b = 0 0.1 m a i cbo collec tor-cutoff current v cb = 80 v, i e = 0 0.1 m a on characteristics h fe dc current gain i c = 10 ma, v ce = 1.0 v i c = 100 ma, v ce = 1.0 v 100 100 v ce( sat ) collector-emitter saturation voltage i c = 100 ma, i b = 10 ma 0.25 v v be( on ) base-emitter on voltage i c = 100 ma, v ce = 1.0 v 1.2 v small signal characteristics f t current gain - bandwidth product i c = 100 ma, v ce = 1.0 v, f = 100 mhz 50 mhz * pulse test: pulse width 300 m s, duty cycle 2.0% spice model pnp (is=12.27p xti=3 eg=1.11 vaf=100 bf=91.63 ne=1.531 ise=12.27p ikf=1.009 xtb=1.5 br=1.287 nc=2 isc=0 ikr=0 rc=.6 cjc=48.28p mjc=.5615 vjc=.75 fc=.5 cje=106.7p mje=.5168 vje=.75 tr=496.3n tf=865.8p itf=.2 vtf=2 xtf=.8 rb=10) typical characteristics pnp general purpose amplifier (continued) typical pulsed current gain vs collector current p3 0.001 0.01 0.1 50 100 150 200 250 300 i - collector current (a) h - typical pulsed current gain fe - 40 oc c v = 1v ce 125 c 25 c collector-emitter saturation voltage vs collector current 10 100 0 0.2 0.4 0.6 0.8 i - collector current (ma) v - collector emitter voltage (v) c cesat b b = 10 - 40 oc 125 c 25 c
MPSA56 / mmbta56 / pzta56 pnp general purpose amplifier (continued) typical characteristics (continued) base emitter on voltage vs collector current p3 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 i - collector current (ma) v - base emitter on voltage (v) c beon v = 1v ce - 40 oc 125 c 25 c base-emitter saturation voltage vs collector current p3 10 100 1000 0.4 0.6 0.8 1 1.2 i - collector current (ma) v - base emitter voltage (v) c besat b b = 10 - 40 oc 125 c 25 c collector-cutoff current vs. ambient temperature 25 50 75 100 125 0.001 0.01 0.1 1 10 t - ambient temperature ( c) i - collector current (na) a cbo o v = 60vz cb collector saturation region 30 00 50 00 10 00 0 20 00 0 30 00 0 50 00 0 0 2 4 6 8 10 i - base current (ua) v - collector-emitter voltage (v) ce b 10 ma 100 ma 1 ma t = 25c i = c a input and output capacitance vs reverse voltage 0.1 1 10 100 100 v - collector voltage(v) capacitance (pf) c f = 1.0 mhz ce ib c ob gain bandwidth product vs collector current p3 1102050100 0 10 20 30 40 i - collector current (ma) f - gain bandwidth product (mhz) c t v = 5v ce
MPSA56 / mmbta56 / pzta56 typical characteristics (continued) pnp general purpose amplifier (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 to -92 sot-23
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